Mechanism of ion track formation in silicon by much lower energy deposition than the formation threshold

Abstract Mechanism of the ion track formation in crystalline silicon (c-Si) is discussed, particularly under 1–9 MeV C 60 irradiation. In this energy region, was not expected because E much lower than threshold th = 17 determined by extrapolation from higher data past literature. The different between irradiations ions and monoatomic ions: tracks were observed 3 irradiation but 200 Xe ions, while both have same electronic stopping ( S e ) 14 keV nm −1 nuclear n for former ions. involvement suggested While inelastic thermal spike (i-TS) calculations predict that high forms tracks, never been experimentally detected, suggesting quick annihilation highly enhanced recrystallization c-Si. Exceptions are MeV, where radii well reproduced i-TS theory with assuming melting transition. Collisional damage induced obstructs Then formed transition survive against recrystallization. This a new type synergy effect , already-known mechanisms, i.e., pre-damage unified spike. c-Si believed as radiation-hard material regime threshold, study suggests has low efficient